Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices

Tsimafei Laryn; Rafael Jumar Chu; Yeonhwa Kim; Eunkyo Ju; Chunghyun Ahn; Hyun-Yong Yu; May Madarang; Hojoong Jung; Won Jun Choi; Daehwan Jung

doi:10.1186/s43074-025-00180-9

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Tsimafei Laryn, Rafael Jumar Chu, Yeonhwa Kim, Eunkyo Ju, Chunghyun Ahn, Hyun-Yong Yu, May Madarang, Hojoong Jung, Won Jun Choi, Daehwan Jung. Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices[J]. PhotoniX. doi: 10.1186/s43074-025-00180-9

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Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices

doi: 10.1186/s43074-025-00180-9

Tsimafei Laryn^{1, 2},
Rafael Jumar Chu^{1, 2},
Yeonhwa Kim^{1, 3},
Eunkyo Ju^{1, 3},
Chunghyun Ahn^{1, 4},
Hyun-Yong Yu^{4, 5},
May Madarang^{1, 2},
Hojoong Jung¹,
Won Jun Choi¹,
Daehwan Jung^{1, 2}

1.
Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, South Korea
2.
Nanoscience and Technology, KIST School, University of Science and Technology, Seoul, 02792, Republic of Korea
3.
Department of Materials Science and Engineering, Korea University, Seoul, South Korea
4.
School of Electrical Engineering, Korea University, Seoul, South Korea
5.
Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea

Funds: This work was supported by Korea National Research Foundation (RS-2021-NR057301, RS-2024–00437570) and KIST institutional project (Grant 2E33542).

Received Date: 2025-04-15
Accepted Date: 2025-07-15
Rev Recd Date: 2025-06-04

Available Online: 2025-07-28

Abstract

Abstract

Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si. Here, we propose multifunctional metamorphic In_0.1Ga_0.9As/AlAs distributed Bragg reflectors (DBRs) on Si which serve as a bottom mirror with a high reflectivity of 99.8% while simultaneously reducing the crystalline defect density by a factor of three, compared to GaAs/AlAs DBR on Si. The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with root-mean-square roughness of 1.2 nm, which is five times smoother than the conventional GaAs/AlAs structure on Si. Furthermore, as proof of concept, InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers. A narrow electroluminescence linewidth of 11.5 meV is observed, confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates.

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References(54)

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